Engineering

Appropriate for upper level undergraduate or graduate courses in microwave transistor amplifiers and oscillators. It would also be useful for short-courses in companies that design and produce these devises.

A unified presentation of the analysis and design of microwave transistor amplifiers (and oscillators) — using scattering parameters techniques.

• A clear and straightforward presentation designed to be comprehensive. A self-contained text. Pg.___

• Examples based on practical designs. Pg.___

• Over 300 figures, 153 problems, and 14 appendices. Pg.___

• Presents material on: transmission-lines concepts; power waves and generalized scattering parameters; measurements of scattering parameters; bipolar and field-effect transistors; power gain expressions; constant VSWR circles; gain, noise, and VSWR design trade offs; broadband amplifiers, high-power amplifiers; oscillator theory, and DROs. Pg.___

• A new appendix using CAD methods. Pg.___

• A 65% increase in the number of problems and figures. Pg.___

• A solution manual. Pg.___

• NEW—Presents material on: transmission-lines concepts; power waves and generalized scattering parameters; measurements of scattering parameters; bipolar and field-effect transistors; power gain expressions; constant VSWR circles; gain, noise, and VSWR design trade offs; broadband amplifiers, high-power amplifiers; oscillator theory, and DROs.
• NEW—A new appendix using CAD methods.
• NEW—A 65% increase in the number of problems and figures.
• NEW—A solution manual.

Preface.


1. Representations of Two-Port Networks.


2. Matching Networks and Signal Flow Graphs.


3. Microwave Transistor Amplifier Design.


4. Noise, Broadband, and High-Power Design Methods.


5. Microwave Transistor Oscillator Design.


Appendix: Computer-Aided Designs.


Appendix A: A. 1. Circle Equations: Bilinear Transformation, A. 2. Derivation of the Input and Output Stability Circles.


Appendix B: Stability Conditions.


Appendix C: Unconditional Stability Conditions.


Appendix D: Derivation of the Unilateral Constant- Gain Circles.


Appendix E: E. 1. Analysis of (3.65) and (3.6.6) for ..., E. 2. Condition for a Simultaneous Conjugate Match.


Appendix F: Derivation of Gt, max.


Appendix G: Derivation of the Constant Operating Power-Gain Circles.


Appendix H: Expressions for ml.


Appendix I: Constant VSWR Circles.


Appendix J: Mapping of Circles.


Appendix K: Noise Concepts.


Appendix L: Noise Figure of an Amplifier,


Appendix M: Conditions for a Stable Oscilllation.


Index.

Microwave Circuits and Devices [CORE TEXTS] (Electrical and Computing Engineering)

A unified presentation of the analysis and design of microwave transistor amplifiers (and oscillators) — using scattering parameters techniques.

FEATURES:

• A clear and straightforward presentation designed to be comprehensive. A self-contained book.
• Examples based on practical designs.
• Over 300 figures, 153 problems, and 14 appendices.

NEW TO THIS EDITION:

• NEW—Presents material on: transmission-lines concepts; power waves and generalized scattering parameters; measurements of scattering parameters; bipolar and field-effect transistors; power gain expressions; constant VSWR circles; gain, noise, and VSWR design trade offs; broadband amplifiers, high-power amplifiers; oscillator theory, and DROs.
• NEW—A new appendix using CAD methods.
• NEW—A 65% increase in the number of problems and figures.

View a Sample Chapter PDF:

Pearson Higher Education offers special pricing when you choose to package your text with other student resources. If you're interested in creating a cost-saving package for your students, contact your Pearson Higher Education representative for pricing and ordering information.

Pearson Higher Education offers special pricing when you choose to package your text with other student resources. If you're interested in creating a cost-saving package for your students contact your Pearson Higher Education representative.